Low growth rate synthesis of GaAs nanowires with uniform size

Abstract The growth of nanowires (NWs) with uniform sizes is crucial for future NW-based electronics. In this work, an efficient one-step process introduced the gallium arsenide NWs on native oxide surface Si, which could be even considered as alternative expensive and sophisticated patterning approaches. proposed strategy considers a Ga pre-deposition step leading to formation droplets homogeneous sizes. That followed by controlled nucleation from those only. Our key controlling perform NW at temperatures above 580 ± 10 °C low fluxes. By method, statistical distribution length diameter vertically grown decreased about 3%–6% their averaged values. Moreover, 100% epitaxial was realized. Besides, undesired parasitic islands addressed accordingly suppressed. study focuses rates, so far not investigated in literature and, great interest e.g. situ studies.